US Patent Issued to MACRONIX International on Feb. 3 for "Three-dimensional memory device with low resistance buffer pillar" (Taiwanese Inventor)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,315, issued on Feb. 3, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan).

"Three-dimensional memory device with low resistance buffer pillar" was invented by Pi-Shan Tseng (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a three-dimensional (3D) memory device including: a substrate, a stack structure, and a vertical channel pillar. The stack structure is disposed on the substrate. The stack structure includes a plurality of dielectric layers and a plurality of gate layers stacked alternately. The vertical channel pillar penetrates through the stack structure. The vertical channel pillar includes a first sourc...