US Patent Issued to MACRONIX International on Feb. 17 for "Memory structure with reduced bridging and manufacturing method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,288, issued on Feb. 17, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan).

"Memory structure with reduced bridging and manufacturing method thereof" was invented by Li-Yen Liang (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory structure, applicable to a three-dimensional AND flash memory device, is provided. The memory structure includes a substrate, a stack structure, a channel pillar, charge storage structures, a first conductive pillar, a second conductive pillar, and an isolation pillar. The stack structure is located on the substrate and includes first dielectric layers and conductive layers alternately...