US Patent Issued to MACRONIX International on Feb. 17 for "Memory device and method of fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,292, issued on Feb. 17, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan).

"Memory device and method of fabricating the same" was invented by Chen-Yu Cheng (Hsinchu, Taiwan) and Tzung-Ting Han (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a substrate, a composite stacked structure, multiple first insulating structures, and multiple through vias. The substrate includes a memory plane region and a periphery region. The composite stacked structure is located on the substrate in the memory plane region and the periphery region, wherein the composite stacked structure includes a first stacked str...