US Patent Issued to MACRONIX International on April 21 for "Memory device with reduced global selection line structures and method of fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,549, issued on April 21, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan).

"Memory device with reduced global selection line structures and method of fabricating the same" was invented by Chen-Yu Cheng (Hsinchu City, Taiwan) and Tzung-Ting Han (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a substrate and a stack structure. A lower portion of the stack structure includes a first global selection line structure and a second global selection line structure. The first global selection line structure includes a first long strip, a first short strip and a first connection part connecting th...