US Patent Issued to MACRONIX INTERNATIONAL on April 14 for "Memory device and manufacturing method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,476, issued on April 14, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).

"Memory device and manufacturing method thereof" was invented by Chih-Kai Yang (Kaohsiung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a substrate, a plurality of conductive layers, a plurality of dielectric layers, a memory structure, a select gate structure and a bit line contact. The conductive layers and the dielectric layers are interlaced and stacked on the substrate. The memory structure penetrates through the conductive layers and the dielectric layers, and the memory structure includes a channel structure and ...