US Patent Issued to LONGITUDE FLASH MEMORY SOLUTIONS on July 21 for "Memory transistor with multiple charge storage layers" (American, Israeli Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,238, issued on July 21, was assigned to LONGITUDE FLASH MEMORY SOLUTIONS LTD. (Dublin).

"Memory transistor with multiple charge storage layers" was invented by Igor Polishchuk (Fremont, Calif.), Sagy Charel Levy (Zichron Yaakov, Israel) and Krishnaswamy Ramkumar (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An example memory device includes a channel positioned between and electrically connecting a first diffusion region and a second diffusion region, and a tunnel dielectric layer, a multi-layer charge trapping layer, and a blocking dielectric layer disposed between the gate structure and the channel. The multi-layer charge trappi...