US Patent Issued to Littelfuse Semiconductor (Wuxi) on Nov. 3 for "Method of glass deposition for semiconductor device fabrication" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,668, issued on Nov. 3, was assigned to Littelfuse Semiconductor (Wuxi) Co. Ltd. (Wuxi, China).

"Method of glass deposition for semiconductor device fabrication" was invented by Xingchong Gu (Wuxi, China), Jifeng Zhou (Wuxi, China) and Lei He (Wuxi, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques for plating a wafer with electrical glass during fabrication of semiconductor devices in the wafer. An electrical-conductivity network is formed in the wafer by doping a surface region of an isolation structure of the wafer. The isolation structure laterally isolates the semiconductor devices from one another in the wafer. After forming the el...