US Patent Issued to Littelfuse Semiconductor (Wuxi) on June 30 for "Mesa device with stack thin film passivation" (Chinese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,581, issued on June 30, was assigned to Littelfuse Semiconductor (Wuxi) Co. Ltd. (Wuxi, China).

"Mesa device with stack thin film passivation" was invented by Glenda Zhang (Wuxi, China), Lucas Zhang (Wuxi, China) and Lei He (Wuxi, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An overvoltage protection device may include an n-type semiconductor substrate, a p-type layer disposed atop the n-type semiconductor substrate, and a passivation region formed in the n-type semiconductor substrate and the p-type layer, wherein the passivation region comprises a semi-insulating polycrystalline silicon (SIPOS) layer."

The patent was filed on Aug. 2, 2023...