ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,832, issued on May 26, was assigned to LG Display Co. Ltd. (Seoul, South Korea).

"Thin film transistor with flourine gradient active layer and fabricating method thereof" was invented by SoYoung Noh (Paju-si, South Korea) and Seunghyo Ko (Paju-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A thin film transistor, a fabricating method of the thin film transistor and a display device comprising the thin film transistor are provided, in which the thin film transistor includes an active layer on a substrate, and a gate electrode spaced apart from the active layer and at least partially overlapped with the active layer, wherein the active ...