ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,726, issued on Oct. 6, was assigned to LAPIS SEMICONDUCTOR Co. LTD. (Yokohama, Japan).
"Semiconductor device and semiconductor device fabrication method" was invented by Masanori Shindo (Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a semiconductor device including: a circuit region formed on a semiconductor substrate; a first insulating film covering at least a portion of a region on the semiconductor substrate that includes an upper portion of the circuit region; redistribution wiring disposed on the first insulating film; a coil formed by the redistribution wiring on the first insulating film, the coil being conn...