US Patent Issued to Lam Research on Sept. 15 for "Selective etching and deposition of memory layers to provide capacitor-to-active silicon electrical coupling" (California Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,740,041, issued on Sept. 15, was assigned to Lam Research Corp. (Fremont, Calif.).

"Selective etching and deposition of memory layers to provide capacitor-to-active silicon electrical coupling" was invented by Ratndeep Srivastava (San Jose, Calif.), Hui Gao (Fremont, Calif.), Samantha Doan (Pleasanton, Calif.), Ganesh Upadhyaya (Pleasanton, Calif.) and Gowri Channa Kamarthy (Pleasanton, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method to electrically couple a capacitor to an active silicon region of a memory structure includes: providing a substrate including the memory structure; performing deposition and etch cycles to remove a portion ...