US Patent Issued to Lam Research on March 24 for "Minimizing tin oxide chamber clean time" (Oregon Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,584,216, issued on March 24, was assigned to Lam Research Corp. (Fremont, Calif.).

"Minimizing tin oxide chamber clean time" was invented by Ching-Yun Chang (West Linn, Ore.), Jeongseok Ha (Portland, Ore.) and Pei-Chi Liu (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques described herein relate to methods and apparatus for minimizing tin oxide chamber clean time. In many cases, the chamber is a deposition chamber used for depositing tin oxide on semiconductor substrates. The techniques involve exposing the chamber surface to a first plasma generated from a first plasma generation gas including reducing chemistry to reduce the ti...