US Patent Issued to Lam Research on March 17 for "Selective deposition of metal oxides using silanes as an inhibitor" (Oregon Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,877, issued on March 17, was assigned to Lam Research Corp. (Fremont, Calif.).

"Selective deposition of metal oxides using silanes as an inhibitor" was invented by Kashish Sharma (Tigard, Ore.), Paul C. Lemaire (Portland, Ore.) and Dennis M. Hausmann (Lake Oswego, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to methods and apparatuses for selective deposition on a surface. In particular, a silicon-containing inhibitor can be used to selectively bind to a first region, thus inhibiting deposition of a material on that first region."

The patent was filed on Sept. 23, 2021, under Application No. 18/245,939.

*For ...