ALEXANDRIA, Va., June 9 -- United States Patent no. 12,651,728, issued on June 9, was assigned to Lam Research Corp. (Fremont, Calif.).
"Passivation chemistry for plasma etching" was invented by Eric A. Hudson (Berkeley, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments herein relate to methods and apparatus for etching a recessed feature in a material on a substrate. For example, the methods may include (a) flowing a gas mixture into a processing chamber, where the gas mixture includes an etch component and a passivation component, and where the passivation component includes particular elements and/or species and/or is provided under particular conditions; (b) generating a plasma fr...