US Patent Issued to Lam Research on June 23 for "Anodization for metal matrix composite semiconductor processing chamber components" (American, Indian Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,926, issued on June 23, was assigned to Lam Research Corp. (Fremont, Calif.).

"Anodization for metal matrix composite semiconductor processing chamber components" was invented by Debanjan Das (Bengaluru, India), Eric Samulon (Oakland, Calif.) and Darrell Ehrlich (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A component of a semiconductor processing chamber formed of a metal matrix component having an anodized layer on a surface thereof. The anodized layer comprises an aluminum oxide layer and is formed over an AlSic component. The anodized layer provides the component with protection against corrosion due to plasma processing gase...