US Patent Issued to Lam Research on Feb. 24 for "Doping processes in metal interconnect structures" (Belgian, American Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,564,039, issued on Feb. 24, was assigned to Lam Research Corp. (Fremont, Calif.).

"Doping processes in metal interconnect structures" was invented by Aniruddha Joi (Milpitas, Calif.), Dries Dictus (Leuven, Belgium) and Yezdi Dordi (Palo Alto, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A metal interconnect structure is doped with zinc, indium, or gallium using top-down doping processes to improve diffusion barrier properties with minimal impact on line resistance. Dopant is introduced prior to metallization or after metallization. Dopant may be introduced by chemical vapor deposition on a liner layer at an elevated temperature prior to metalli...