US Patent Issued to Lam Research on Aug. 4 for "Plasma etching chemistries of high aspect ratio features in dielectrics" (California Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,948, issued on Aug. 4, was assigned to Lam Research Corp. (Fremont, Calif.).

"Plasma etching chemistries of high aspect ratio features in dielectrics" was invented by Keren J. Kanarik (Los Altos, Calif.), Samantha Siamhwa Tan (Newark, Calif.), Yang Pan (Los Altos, Calif.) and Jeffrey Marks (Saratoga, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant with a coolant temperature below -20deg C. An etch gas is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched into the s...