US Patent Issued to Lam Research on Aug. 18 for "Method of forming expandable doped oxide films for advanced semiconductor applications" (Oregon Inventor)

ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,713,887, issued on Aug. 18, was assigned to Lam Research Corp. (Fremont, Calif.).

"Method of forming expandable doped oxide films for advanced semiconductor applications" was invented by Reza Bayati (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Films that can be useful in large area gap fill applications, such as in the formation of advanced 3D NAND devices, involve processing a semiconductor substrate by depositing on a patterned semiconductor substrate a doped silicon oxide film a doped silicon oxide film configured to expand upon annealing at a temperature above the films glass transition temperature, and annealing the doped silicon ...