ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,719,022, issued on Aug. 25, was assigned to Lam Research Corp. (Fremont, Calif.) and Advanced Energy Industries Inc. (Denver).

"Fast frequency tracking control for radiofrequency power amplifiers with rapidly changing plasma loads" was invented by Sanghyeon Park (Sunnyvale, Calif.) and Wei Liang (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A radiofrequency (RF) power amplifier for a plasma processing system includes a switching transistor having a drain terminal, a source terminal, and a gate. The source terminal is connected to a reference ground potential. The RF power amplifier includes a direct current power supply connected to t...