ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,729,273, issued on Sept. 8, was assigned to KYUNGPOOK NATIONAL UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION (Daegu, South Korea).

"Porous film with low dielectric property and manufacturing method thereof" was invented by Ki-Ho Nam (Daegu, South Korea), Seongjun Khim (Gimhae-si, South Korea) and Yun Chan Hwang (Geoje-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing method of a porous polyimide film, includes: preparing a polyamic acid solution at a concentration of 10 to 30 wt % by dissolving a diamine compound and a dianhydride in a solvent; applying the prepared polyamic acid solution to a substrate to prepare a fi...