US Patent Issued to KYOTO UNIVERSITY on Feb. 24 for "SiC semiconductor device manufacturing method and SiC MOSFET" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,766, issued on Feb. 24, was assigned to KYOTO UNIVERSITY (Kyoto, Japan).

"SiC semiconductor device manufacturing method and SiC MOSFET" was invented by Tsunenobu Kimoto (Kyoto, Japan) and Keita Tachiki (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A SiC semiconductor device manufacturing method includes a step of etching a surface of a SiC substrate 1 with H2 gas under Si-excess atmosphere within a temperature range of 1000deg C. to 1350deg C., a step of depositing, by a CVD method, a SiO2 film 2 on the SiC substrate 1 at such a temperature that the SiC substrate 1 is not oxidized, and a step of thermally treating the SiC substrate 1,...