US Patent Issued to KWANSEI GAKUIN EDUCATIONAL FOUNDATION, TOYOTA TSUSHO on March 17 for "Method of manufacturing SiC semiconductor device and SiC semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,873, issued on March 17, was assigned to KWANSEI GAKUIN EDUCATIONAL FOUNDATION (Hyogo, Japan) and TOYOTA TSUSHO Corp. (Nagoya, Japan).

"Method of manufacturing SiC semiconductor device and SiC semiconductor device" was invented by Tadaaki Kaneko (Sanda, Japan) and Kiyoshi Kojima (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "An object of the present invention is to provide a high-quality SiC semiconductor device. In order to solve the above problem, the present invention comprises a method for producing a SiC semiconductor device, comprising a growth step of forming a growth layer on a workpiece comprising SiC single crystals, a device forma...