US Patent Issued to KWANSEI GAKUIN EDUCATIONAL FOUNDATION, TOYO ALUMINIUM, TOYOTA TSUSHO on Oct. 27 for "Method for producing aluminum nitride substrate, aluminum nitride substrate, and method for suppressing occurrence of cracks in aluminum nitride layer" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,883, issued on Oct. 27, was assigned to KWANSEI GAKUIN EDUCATIONAL FOUNDATION (Hyogo, Japan), TOYO ALUMINIUM K.K. (Osaka, Japan) and TOYOTA TSUSHO Corp. (Aichi, Japan).

"Method for producing aluminum nitride substrate, aluminum nitride substrate, and method for suppressing occurrence of cracks in aluminum nitride layer" was invented by Tadaaki Kaneko (Sanda, Japan), Daichi Dojima (Sanda, Japan), Taku Murakawa (Sanda, Japan), Moeko Matsubara (Osaka, Japan) and Yoshitaka Nishio (Osaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An object of the present invention is to provide a novel technique capable of suppressing the occurrence of cracks ...