US Patent Issued to Korea Institute of Science and Technology on Sept. 1 for "Semiconductor device including trench with undercut structure and method for manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,217, issued on Sept. 1, was assigned to Korea Institute of Science and Technology (Seoul, South Korea).

"Semiconductor device including trench with undercut structure and method for manufacturing the same" was invented by Hyung-Jun Kim (Seoul, South Korea), Seunghwan Kim (Seoul, South Korea) and Daeyoon Baek (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments relate to a semiconductor device including a trench with undercut structure including a substrate made of a first material; an insulation layer formed on an upper surface of the substrate; at least one trench penetrating the insulation layer toward the substrate; and ...