US Patent Issued to Korea Institute of Science and Technology on March 17 for "Magnetic memory in dual mode and AI memory thereof" (South Korean Inventor)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,580,012, issued on March 17, was assigned to Korea Institute of Science and Technology (Seoul, South Korea).

"Magnetic memory in dual mode and AI memory thereof" was invented by Seung Heon Baek (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic memory operating in dual mode of the present disclosure includes a three-layer MTJ stack including a fixed layer with magnetization fixed by magnetic tunnel junction stack, a free layer with non-fixed magnetization, and a tunnel barrier layer disposed therebetween, wherein the magnetic memory operates in a volatile mode and a non-volatile mode by switching an energy barrier to one of a...