US Patent Issued to KOREA ELECTRONICS TECHNOLOGY INSTITUTE on March 24 for "Method of depositing an aluminum nitride (AlN) thin film" (South Korean Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,584,207, issued on March 24, was assigned to KOREA ELECTRONICS TECHNOLOGY INSTITUTE (Seongnam-si, South Korea).

"Method of depositing an aluminum nitride (AlN) thin film" was invented by Sungmin Hong (Yongin-si, South Korea) and Hyungman Lee (Seongnam-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of depositing an AlN thin film according to an embodiment of the disclosure comprises: a step of forming an insulating layer on a base substrate; and a step of depositing an AlN thin film on the insulating layer through a sputtering process, wherein the step of depositing the AlN thin film is performed through a continuous deposition ...