ALEXANDRIA, Va., May 26 -- United States Patent no. 12,642,012, issued on May 26, was assigned to KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Daejeon, South Korea).

"Memory device and memory apparatus including the same" was invented by Shinhyun Choi (Daejeon, South Korea), See-On Park (Daejeon, South Korea), Jongmin Bae (Daejeon, South Korea), Hakcheon Jeong (Daejeon, South Korea) and Jongyong Park (Daejeon, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a memory device and a memory apparatus including the memory device. The memory device includes a first electrode, a second electrode spaced apart from the first electrode, and a resistance change layer arranged between the ...