US Patent Issued to KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY on May 12 for "Method for preparing transition metal chalcogenide film and organometalic promoter and forming the same" (South Korean Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,577, issued on May 12, was assigned to KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Daejeon, South Korea).

"Method for preparing transition metal chalcogenide film and organometalic promoter and forming the same" was invented by Kibum Kang (Daejeon, South Korea) and Taesoo Kim (Daejeon, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a method for preparing a transition metal chalcogenide film, which includes: a step of injecting a precursor for preparing a transition metal chalcogenide and an organometallic promoter into a chamber equipped with a substrate; and a step of forming a transition metal chalcogenide film on th...