US Patent Issued to Korea Advanced Institute of Science and Technology on July 14 for "Method of manufacturing SOI wafer" (South Korean Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,096, issued on July 14, was assigned to Korea Advanced Institute of Science and Technology (Daejeon, South Korea).

"Method of manufacturing SOI wafer" was invented by Jungchul Lee (Daejeon, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A SOI wafer is formed by forming a hole array on a surface of a wafer including a semiconductor material, forming a membrane-cavity structure by annealing process on the wafer, forming a buried oxide layer on an inside of the cavity and an outer oxide layer on an outside of the membrane, and forming a device layer by removing the outer oxide layer."

The patent was filed on July 17, 2023, under Applicatio...