US Patent Issued to Kokusai Electric on Sept. 22 for "Substrate processing apparatus, method of manufacturing semiconductor device and plasma generating apparatus" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,744,182, issued on Sept. 22, was assigned to Kokusai Electric Corp. (Tokyo).

"Substrate processing apparatus, method of manufacturing semiconductor device and plasma generating apparatus" was invented by Tsuyoshi Takeda (Toyama, Japan) and Daisuke Hara (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a gas supplier through which a process gas is supplied to the process chamber; a plasma generator provided so as to protrude into the process chamber, constituted...