US Patent Issued to KOKUSAI ELECTRIC on May 12 for "Gas cleaning method, method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus" (Japanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,623,258, issued on May 12, was assigned to KOKUSAI ELECTRIC Corp. (Tokyo).

"Gas cleaning method, method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus" was invented by Takahiro Kobayashi (Toyama, Japan), Iwao Nakamura (Toyama, Japan), Toru Harada (Toyama, Japan), Hisashi Nomura (Toyama, Japan) and Sadayoshi Horii (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A gas cleaning method includes: (a) removing a first metal element as one of contaminants from a process chamber by supplying a chlorine-containing gas into the process chamber without supplying an oxygen-con...