ALEXANDRIA, Va., March 3 -- United States Patent no. 12,567,571, issued on March 3, was assigned to Kokusai Electric Corp. (Tokyo).
"Method of manufacturing semiconductor device" was invented by Naofumi Ohashi (Toyama, Japan) and Shun Matsui (Toyama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Described herein is a technique capable of uniformizing a quality of a film even when a processing environment changes. According to one aspect thereof, there is provided a method of manufacturing a semiconductor device, including: (a) loading a substrate into a process chamber; (b) supplying a gas to the substrate in the process chamber through a dispersion plate of a shower head while heating the dispersion ...