ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,878, issued on March 17, was assigned to Kokusai Electric Corp. (Tokyo).
"Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium" was invented by Motomu Degai (Toyama, Japan), Kimihiko Nakatani (Toyama, Japan), Yoshitomo Hashimoto (Toyama, Japan) and Takayuki Waseda (Toyama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a technique that includes (a) supplying a fluorine-containing gas to a substrate including a first surface and a second surface; (b) supplying an oxygen- and hydrogen-containing gas and a catalyst to the substrate after performing (a...