ALEXANDRIA, Va., July 28 -- United States Patent no. 12,692,623, issued on July 28, was assigned to Kokusai Electric Corp. (Tokyo).
"Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus" was invented by Kaichiro Minami (Toyama, Japan), Naonori Akae (Toyama, Japan), Akito Hirano (Toyama, Japan), Sadayasu Suyama (Toyama, Japan), Takayuki Yamamoto (Toyama, Japan), Shunsuke Asakura (Toyama, Japan), Yugo Orihashi (Toyama, Japan) and Yasuhiro Megawa (Toyama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a technique that includes: (a) forming a modified layer by modifying at least a portion of an oxide film of a s...