ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,936, issued on Aug. 4, was assigned to KOKUSAI ELECTRIC Corp. (Tokyo).
"Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium" was invented by Kimihiko Nakatani (Toyama, Japan), Takashi Nakagawa (Toyama, Japan), Takayuki Waseda (Toyama, Japan) and Motomu Degai (Toyama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a technique that includes: modifying a surface of first base exposed on a substrate by supplying modifying gas including the first base and second base exposed on the substrate; and selectively forming a film containing at least first element and second element different ...