US Patent Issued to KOJUNDO CHEMICAL LABORATORY on June 30 for "Atomic layer deposition method for metal thin films" (Japanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,668,879, issued on June 30, was assigned to KOJUNDO CHEMICAL LABORATORY Co. LTD. (Sakado, Japan).

"Atomic layer deposition method for metal thin films" was invented by Fumikazu Mizutani (Sakado, Japan), Shintaro Higashi (Sakado, Japan) and Naoyuki Takezawa (Sakado, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a method for depositing a metal thin film by atomic layer deposition (ALD) using an organometallic complex as a source material and without using radical species such as plasma and ozone, which have a possibility of deactivation. The method is an atomic layer deposition (ALD) method for metal thin films which includes: a process...