US Patent Issued to Kioxia on Sept. 29 for "Multilevel antiferromagnetic memory device" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,749,519, issued on Sept. 29, was assigned to Kioxia Corp. (Tokyo).

"Multilevel antiferromagnetic memory device" was invented by Akira Katayama (Yokohama Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a first conductor, a first stacked body on the first conductor, a second conductor on the first stacked body, a second stacked body on the second conductor, and a third conductor on the second stacked body. The first stacked body includes a first ferromagnetic layer, a first insulating layer, a second ferromagnetic layer, a non-magnetic first metal layer, and a third ferromagnetic layer stacked in order from a side ...