ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,624, issued on Sept. 22, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor memory device" was invented by Takafumi Masuda (Kawasaki, Japan), Mutsumi Okajima (Yokkaichi, Japan), Nobuyoshi Saito (Ota, Japan) and Keiji Ikeda (Kawasaki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a memory layer and a via-wiring extending in a first direction. The memory layer includes a semiconductor layer electrically connected to the via-wiring, a gate electrode including parts opposed to surfaces of the semiconductor layer on one side and the other side in the first direction, a memory portion disposed on one side i...