US Patent Issued to Kioxia on Sept. 1 for "Semiconductor device with oxide semiconductor layer for memory cells" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,147, issued on Sept. 1, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor device with oxide semiconductor layer for memory cells" was invented by Takao Kosaka (Yokohama Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a semiconductor device includes a conductive layer, an oxide semiconductor layer provided penetrating the conductive layer in a first direction, and a first insulating film provided between the conductive layer and the oxide semiconductor layer in a second direction that intersects the first direction. The first insulating film comprises boron nitride."

The patent was filed on Aug. 25, 202...