US Patent Issued to Kioxia on Oct. 6 for "Pattern forming method, semiconductor device manufacturing method, and template" (Japanese Inventor)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,754,487, issued on Oct. 6, was assigned to Kioxia Corp. (Tokyo).

"Pattern forming method, semiconductor device manufacturing method, and template" was invented by Anupam Mitra (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a pattern forming method includes placing a resin material on a film to be processed; pressing a template including a plurality of patterns protruding from a reference plane against the resin material to form a first resin film having first and second patterns, separated from each other in a first direction, and a third pattern between the first and second patterns; forming a second re...