ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,348, issued on Oct. 27, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor memory device having staircase conductive region" was invented by Takeshi Murata (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a semiconductor memory device has a first region with first conductive layers stacked in a first direction and first columnar portions, a second region with second conductive layers stacked in the first direction and second columnar portions extending in the first direction through the second conductive layers, and a third region between the first and second regions in a second direction and includ...