US Patent Issued to Kioxia on Oct. 20 for "Semiconductor memory device" (Japanese Inventor)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,687, issued on Oct. 20, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor memory device" was invented by Xu Li (Yokohama Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a memory cell array, a well voltage control circuit, and a source voltage control circuit. Before writing data, first and second transistors respectively connected to a select gate line and a word line are turned on at a first timing, and a ground voltage is applied to the first transistor at a second timing and to the second transistor at a third timing. The source voltage control circuit applies a first voltage to the source ...