US Patent Issued to Kioxia on Nov. 3 for "Semiconductor memory device with a plurality of wiring layers" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,306, issued on Nov. 3, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor memory device with a plurality of wiring layers" was invented by Toshiaki Sato (Yokohama, Japan) and Masaki Unno (Fujisawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a plurality of sense amplifier regions, a first wiring layer including a plurality of bit lines electrically connected to a plurality of semiconductor layers, and a second wiring layer including a plurality of first wirings electrically connecting the respective plurality of sense amplifier regions to the plurality of bit lines. The semiconductor substrate include...