US Patent Issued to Kioxia on Nov. 3 for "Semiconductor memory device and semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,289, issued on Nov. 3, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor memory device and semiconductor device" was invented by Yoshikazu Hosomura (Kamakura, Japan), Go Oike (Kuwana, Japan), Yutaka Shimizu (Yokohama, Japan), Masaki Nakamura (Fujisawa, Japan), Hironobu Hamanaka (Yokkaichi, Japan) and Hideo Wada (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device comprises: a substrate; a first wiring layer; a second wiring layer provided between the substrate and the first wiring layer; and a memory cell array layer provided between the substrate and the second wiring layer. The memory cell array layer co...