US Patent Issued to Kioxia on Nov. 3 for "Semiconductor memory device and manufacturing method of semiconductor memory device" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,283, issued on Nov. 3, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor memory device and manufacturing method of semiconductor memory device" was invented by Junichi Hashimoto (Yokkaichi Mie, Japan) and Toshiyuki Sasaki (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a semiconductor memory device includes a lower layer, a stacked body above the lower layer with first conductive layers and first insulating layers alternately stacked. A pillar penetrates through the stacked body to reach the lower layer. At least one first insulating layer other than the lowest among the first insulating layers in ...