US Patent Issued to Kioxia on Nov. 3 for "NAND flash memory executing high-speed mode read operation" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,815, issued on Nov. 3, was assigned to Kioxia Corp. (Tokyo).

"NAND flash memory executing high-speed mode read operation" was invented by Tomohiko Ito (Kawasaki Kanagawa, Japan) and Hiroshi Yoshihara (Fujisawa Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a semiconductor memory device includes a first memory string including a first memory cell transistor; a second memory string including a second memory cell transistor; a first word line commonly coupled to a gate of each of the first memory cell transistor and the second memory cell transistor; and a control circuit, wherein during a first read operatio...