US Patent Issued to Kioxia on May 19 for "Semiconductor device and semiconductor device manufacturing method" (Japanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,562, issued on May 19, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor device and semiconductor device manufacturing method" was invented by Keiichi Niwa (Yokkaichi Mie, Japan) and Yoshiaki Goto (Kiyosu Aichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a substrate on which wiring is formed; a first semiconductor element flip-chip bonded to the substrate; a second semiconductor element provided on the first semiconductor element; a first resin provided in at least part of a region between the first semiconductor element and the substrate; a second resin provided in at least part of a region between the s...