ALEXANDRIA, Va., May 12 -- United States Patent no. 12,626,738, issued on May 12, was assigned to Kioxia Corp. (Tokyo).
"Semiconductor memory device including memory string and plurality of select transitstors and method including a write operation" was invented by Hiroki Date (Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "In a semiconductor memory device, in a write operation performed to a memory cell transistor, a first voltage is applied to a first word line and a second voltage lower than the first voltage is applied to a second word line. When a stop command is received during the write operation, a third voltage lower than the second voltage is applied to the first and second word lin...