ALEXANDRIA, Va., March 24 -- United States Patent no. 12,586,648, issued on March 24, was assigned to Kioxia Corp. (Tokyo).
"Memory device" was invented by Hideto Takekida (Nagoya Aichi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a memory device includes: a first semiconductor layer, a first conductive layer, a second semiconductor layer, and a second conductive layer that are arranged in this order in a first direction, spaced apart from each other; a first semiconductor film extending in the first direction, being in contact with the first semiconductor layer and the second semiconductor layer, and intersecting the first conductive layer and the second conductive laye...