US Patent Issued to Kioxia on March 17 for "Semiconductor device, semiconductor memory device, and semiconductor device manufacturing method" (Japanese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,688, issued on March 17, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor device, semiconductor memory device, and semiconductor device manufacturing method" was invented by Taro Shiokawa (Nagoya Aichi, Japan), Kiwamu Sakuma (Yokkaichi Mie, Japan), Keiko Sakuma (Yokkaichi Mie, Japan), Mutsumi Okajima (Yokkaichi Mie, Japan), Kazuhiro Matsuo (Kuwana Mie, Japan) and Masaya Toda (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device of embodiments includes: a first electrode; a second electrode; an oxide semiconductor layer between the first electrode and the second electrode and including a first region surroun...